Design Considerations for Wideband CMOS Amplifiers
نویسندگان
چکیده
Time-domain responses of wideband CMOS amplifiers using several inductive peaking techniques are presented. Transient performance considerations are described including the effects of transistor parasitics on settling time, edge rates, etc. A combination of timeand frequency-domain performance is derived for a given bandwidth extension technique and tradeoffs are discussed. Measured results for several high-speed high-gain single-stage amplifiers are presented in 0.18μm CMOS, and a design strategy for multistage amplifiers is described. Finally, design and simulation results are presented for a multi-stage amplifier in 0.18μm CMOS that attains a bandwidth of 22.7GHz with 14.7dB voltage gain, operates at 40Gb/s, and consumes 93.6mW.
منابع مشابه
On the Design of Wideband Cmos Low-noise Amplifiers
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